View QS8M13_8931860.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved. 4v drive nch + pch mosfet QS8M13 ? structure silicon n-channel mosfet/silicon p-channel mosfet ? features 1) low on-resistance.2) high power package(tsmt8). 3) low voltage drive(4v drive). ? application switching ? packaging specifications package taping code tcr basic ordering unit (pieces) 3000 QS8M13 ? ? absolute maximum ratings (ta = 25 ? c) tr1 : n-ch tr2 : p-ch drain-source voltage v dss 30 ? 30 v gate-source voltage v gss ? 20 ? 20 v continuous i d ? 6 ? 5a pulsed i dp ? 18 ? 18 a continuous i s 1.0 ? 1.0 a pulsed i sp 18 ? 18 a w / total w / element channel temperature tch ? c range of storage temperature tstg ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. type source current(body diode) drain current parameter power dissipation p d symbol 1.5 ? 55 to ? 150 unit limits 1.25 150 (1) tr1 source(2) tr1 gate (3) tr2 source (4) tr2 gate (5) tr2 drain (6) tr2 drain (7) tr1 drain (8) tr1 drain ? 1 esd protection diode ? 2 body diode tsmt8 (8) (7) (5) (6) (1) (2) (4) (3) *1 *1*2 abbreviated symbol : m13 ? dimensions (unit : mm) ? inner circuit ? 2 ? 1 (8) (7) (1) (2) ? 2 ? 1 (6) (5) (3) (4) 1/10 2011.05 - rev.a downloaded from: http:///
www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet QS8M13 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 20v, v ds =0v drain-source breakdown voltage v (br)dss 30 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =30v, v gs =0v gate threshold voltage v gs (th) 1.0 - 2.5 v v ds =10v, i d =1ma -2 02 8 i d =6a, v gs =10v -2 53 5 i d =6a, v gs =4.5v 28 39 i d =6a, v gs =4.0v forward transfer admittance l y fs l 3.0 - - s v ds =10v, i d =6a input capacitance c iss - 390 - pf v ds =10v output capacitance c oss - 150 - pf v gs =0v reverse transfer capacitance c rss - 70 - pf f=1mhz turn-on delay time t d(on) -8-n s i d =3a, v dd 15v rise time t r - 40 - ns v gs =10v turn-off delay time t d(off) - 35 - ns r l =5 ? fall time t f -7-n s r g =10 ? total gate charge q g - 5.5 - nc i d =6a, v dd 15v gate-source charge q gs - 1.5 - nc v gs =5v gate-drain charge q gd - 2.1 - nc *pulsed ? body diode characteristics (source-drain) (ta = 25 ? c) symbol min. typ. max. unit forward voltage v sd - - 1.2 v i s =6a, v gs =0v *pulsed parameter conditions conditions parameter static drain-source on-stateresistance r ds (on) m ? * * ** * * * * * ** * * * * * * 2/10 2011.05 - rev.a downloaded from: http:///
www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet QS8M13 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 20v, v ds =0v drain-source breakdown voltage v (br)dss ? 30 - - v i d = ? 1ma, v gs =0v zero gate voltage drain current i dss - ? 1 ? av ds = ? 30v, v gs =0v gate threshold voltage v gs (th) ? 1.0 - ? 2.5 v v ds = ? 10v, i d = ? 1ma -2 83 9 i d = ? 5a, v gs = ? 10v -4 05 6 i d = ? 2.5a, v gs = ? 4.5v -4 56 3 i d = ? 2.5a, v gs = ? 4.0v forward transfer admittance l y fs l3 - - sv ds = ? 10v, i d = ? 5a input capacitance c iss - 1100 - pf v ds = ? 10v output capacitance c oss - 150 - pf v gs =0v reverse transfer capacitance c rss - 130 - pf f=1mhz turn-on delay time t d(on) -9-n s i d = ? 2.5a, v dd ? 15v rise time t r - 40 - ns v gs = ? 10v turn-off delay time t d(off) - 90 - ns r l =6 ? fall time t f - 55 - ns r g =10 ? total gate charge q g - 10 - nc i d = ? 5a, v dd ? 15v gate-source charge q gs - 3.6 - nc v gs = ? 5v gate-drain charge q gd - 3.0 - nc *pulsed ? body diode characteristics (source-drain) (ta = 25 ? c) symbol min. typ. max. unit forward voltage v sd -- ? 1.2 v i s = ? 5a, v gs =0v *pulsed parameter conditions conditions m ? static drain-source on-stateresistance r ds (on) parameter * * ** * * * * * ** * * * * * * * 3/10 2011.05 - rev.a downloaded from: http:///
www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet QS8M13 ? electrical characteristic curves (ta=25 ? c) tr.1(nch) 0 1 2 3 4 5 6 0 0.2 0.4 0.6 0.8 1 drain current : i d [a] drain-source voltage : v ds [v] fig.1 typical output characteristics ( ) v gs =10.0v v gs =4.0v v gs =4.5v v gs =3.0v v gs =2.0v v gs =2.8v v gs =2.5v t a =25 pulsed 0 1 2 3 4 5 6 0 2 4 6 8 10 drain current : i d [a] drain-source voltage : v ds [v] fig.2 typical output characteristics ( ) v gs =2.0v v gs =10.0v v gs =4.0v v gs =4.5v v gs =2.5v v gs =2.8v t a =25 pulsed 1 10 100 1000 0.01 0.1 1 10 100 static drain-source on-state resistance r ds(on) [m ] drain current : i d [a] fig.3 static drain-source on-state resistance vs. drain current v gs =4.0v v gs =4.5v v gs =10v t a =25 pulsed 1 10 100 1000 0.01 0.1 1 10 static drain-source on-state resistance r ds(on) [m ] drain current : i d [a] fig.4 static drain-source on-state resistance vs. drain current v gs =10v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 1 10 100 1000 0.01 0.1 1 10 static drain-source on-state resistance r ds(on) [m ] drain current : i d [a] fig.5 static drain-source on-state resistance vs. drain current v gs =4.5v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 1 10 100 1000 0.01 0.1 1 10 static drain-source on-state resistance r ds(on) [m ] drain current : i d [a] fig.6 static drain-source on-state resistance vs. drain current v gs =4v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 4/10 2011.05 - rev.a downloaded from: http:///
www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet QS8M13 0.01 0.1 1 10 0.001 0.01 0.1 1 10 forward transfer admittance y fs [s] drain current : i d [a] fig.7 forward transfer admittance vs. drain current v ds =10v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 0.001 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 drain currnt : i d [a] gate-source voltage : v gs [v] fig.8 typical transfer characteristics v ds =10v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 source current : i s [a] source-drain voltage : v sd [v] fig.9 source current vs. source-drain voltage v gs =0v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 0 20 40 60 80 100 0 2 4 6 8 10 static drain-source on-state resistance r ds(on) [m ] gate-source voltage : v gs [v] fig.10 static drain-source on-state resistance vs. gate-source voltage i d =6.0a i d =3.0a t a =25 pulsed 1 10 100 1000 0.01 0.1 1 10 switching time : t [ns] drain current : i d [a] fig.11 switching characteristics t d(on) t r t d(off) t f v dd P 15v v gs =10v r g =10 t a =25 c pulsed 0 2 4 6 8 10 0 2 4 6 8 10 gate-source voltage : v gs [v] total gate charge : q g [nc] fig.12 dynamic input characteristics t a =25 c v dd =15v i d =6a pulsed 5/10 2011.05 - rev.a downloaded from: http:///
QS8M13 10 100 1000 10000 0.01 0.1 1 10 100 capacitance : c [pf] drain-source voltage : v ds [v] fig.13 typical capacitance vs. drain-source voltage t a =25 c f=1mhz v gs =0v c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 drain current : i d [ a ] drain-source voltage : v ds [ v ] fig.14 maximum safe operating area t a =25 c single pulse : 1unit mounted on a ceramic board. (30mm 30mm 0.8mm) operation in this area is limited by r ds(on) (v gs = 10v) p w = 100s p w = 1ms p w = 10ms dc operation 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized transient thermal resistance : r t pulse width : pw (s) fig.15 normalized transient thermal resistance v.s. pulse width t a =25 c single pulse : 1unit mounted on a ceramic board. 30mm 30mm 0.8mm) rth (ch- a) =100 c /w rth (ch- a) (t)=r(t) rth (ch- a) 6/10 2011.05 - rev.a downloaded from: http:/// www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet QS8M13 tr.2(pch) 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 drain current : - i d [a] drain-source voltage : - v ds [v] fig.1 typical output characteristics ( ) v gs = - 2.5v v gs = - 10.0v v gs = - 4.0v v gs = - 4.5v v gs = - 2.8v v gs = - 3.0v t a =25 c pulsed 0 1 2 3 4 5 0 2 4 6 8 10 drain current : - i d [a] drain-source voltage : - v ds [v] fig.2 typical output characteristics ( ) v gs = - 2.5v v gs = - 10.0v v gs = - 4.0v v gs = - 4.5v v gs = - 2.8v v gs = - 3.0v t a =25 c pulsed 1 10 100 1000 0.01 0.1 1 10 100 static drain-source on-state resistance r ds(on) [m ] drain current : - i d [a] fig.3 static drain-source on-state resistance vs. drain current v gs = - 4.0v v gs = - 4.5v v gs = - 10v t a =25 c pulsed 1 10 100 1000 0.01 0.1 1 10 100 static drain-source on-state resistance r ds(on) [m ] drain current : - i d [a] fig.4 static drain-source on-state resistance vs. drain current v gs = - 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 1 10 100 1000 0.01 0.1 1 10 100 static drain-source on-state resistance r ds(on) [m ] drain current : - i d [a] fig.5 static drain-source on-state resistance vs. drain current v gs = - 4.5v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 1 10 100 1000 0.01 0.1 1 10 100 static drain-source on-state resistance r ds(on) [m ] drain current : - i d [a] fig.6 static drain-source on-state resistance vs. drain current v gs = - 4v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 7/10 2011.05 - rev.a downloaded from: http:///
www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet QS8M13 0.01 0.1 1 10 100 0.01 0.1 1 10 forward transfer admittance y fs [s] drain current : - i d [a] fig.7 forward transfer admittance vs. drain current v ds = - 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 0.001 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 drain currnt : - i d [a] gate-source voltage : - v gs [v] fig.8 typical transfer characteristics v ds = - 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 source current : - i s [a] source-drain voltage : - v sd [v] fig.9 source current vs. source-drain voltage v gs =0v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 0 20 40 60 80 100 0 2 4 6 8 10 static drain-source on-state resistance r ds(on) [m ] gate-source voltage : - v gs [v] fig.10 static drain-source on-state resistance vs. gate-source voltage i d = - 5.0a i d = - 2.5a t a =25 c pulsed 1 10 100 1000 0.01 0.1 1 10 switching time : t [ns] drain current : - i d [a] fig.11 switching characteristics t d(on) t r t d(off) t f v dd P - 15v v gs = - 10v r g =10 t a =25 c pulsed 0 2 4 6 8 10 0 5 10 15 20 gate-source voltage : - v gs [v] total gate charge : q g [nc] fig.12 dynamic input characteristics t a =25 c v dd = - 15v i d = - 5a pulsed 8/10 2011.05 - rev.a downloaded from: http:///
QS8M13 10 100 1000 10000 0.01 0.1 1 10 100 capacitance : c [pf] drain-source voltage : - v ds [v] fig.13 typical capacitance vs. drain-source voltage t a =25 c f=1mhz v gs =0v c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 drain current : - i d [ a ] drain-source voltage : - v ds [ v ] fig.14 maximum safe operating area t a =25 c single pulse : 1unit mounted on a ceramic board. (30mm 30mm 0.8mm) operation in this area is limited by r ds(on) (v gs = - 10v) p w = 100s p w = 1ms p w = 10ms dc operation 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized transient thermal resistance : r t pulse width : pw (s) fig.15 normalized transient thermal resistance v.s. pulse width t a =25 c single pulse : 1unit mounted on a ceramic board. (30mm 30mm 0.8mm) rth (ch- a) =100 c /w rth (ch- a) (t)=r(t) rth (ch- a) 9/10 2011.05 - rev.a downloaded from: http:/// www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet QS8M13 ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to designesd protection circuit. v gs r g v d s d.u.t. i d r l v dd 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) v g v gs charge q g q gs q gd v gs i g(const.) v d s d.u.t. i d r l v dd fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform v gs r g v ds d.u.t. i d r l v dd 90% 90% 90% 10% 10% 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t f t d(off) v g v gs charge q g q gs q gd v gs i g(const.) v d s d.u.t. i d r l v dd fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform 10/10 2011.05 - rev.a downloaded from: http:///
r1120 a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes downloaded from: http:///

▲Up To Search▲

Price & Availability of QS8M13

	To Download QS8M13 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .